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000127118 1001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b0$$eCorresponding author
000127118 1112_ $$aInternational Silicon-Germanium Technology and Device Meeting$$cUC Berkeley$$d2012-06-04 - 2012-12-06$$gISTDM 2012$$wUSA
000127118 245__ $$aLow temperature RPCVD epitaxial growth of Si 1-xGe x and Ge using Si2H6 and Ge2H6
000127118 260__ $$c2012
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000127118 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b1
000127118 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b2
000127118 7001_ $$0P:(DE-Juel1)138772$$aBernardy, Patric$$b3
000127118 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b4
000127118 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b5
000127118 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b6
000127118 7001_ $$0P:(DE-HGF)0$$aBreuer, U$$b7
000127118 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b8
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000127118 9141_ $$y2012
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