Home > Publications database > Towards future III-nitride based THz OEICs in the UV range
 
Proceedings FZJ-2012-00186
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Towards future III-nitride based THz OEICs in the UV range

 ;  ;  ;  ;  ;  ;  ;  ;  ;

2012

ISBN: 978-1-4673-1195-3

The ninth International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '12, SmoleniceSmolenice, Slovakia, 11 Nov 2012 - 15 Nov 20122012-11-112012-11-15

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012
Click to display QR Code for this record

The record appears in these collections:
JARA > JARA > JARA-JARA\-FIT
Document types > Books > Proceedings
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
 Record created 2012-12-03, last modified 2021-01-29
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508-8-g6303aad
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English