Proceedings

FZJ-2013-00802

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The d-DotFET: MOSFET based on locally strained silicon

Moers, J. (Corresponding author)FZJ* ; Gerharz, J.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ*

2012
Slovakian Academy of Science
ISBN: 978-1-4673-1195-3

This record in other databases:

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012

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