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Proceedings FZJ-2013-00802
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The d-DotFET: MOSFET based on locally strained silicon

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2012
Slovakian Academy of Science
ISBN: 978-1-4673-1195-3

9th International Conference on Advanced Semiconductors Devices and Microsystems ASDAM 2012, ASDAM 2012, SmoleniceSmolenice, Slovakia, 11 Nov 2012 - 15 Nov 20122012-11-112012-11-15 Slovakian Academy of Science ()

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012
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JARA > JARA > JARA-JARA\-FIT
Document types > Books > Proceedings
Institute Collections > PGI > PGI-9
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 Record created 2013-01-24, last modified 2021-01-29
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