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@PROCEEDINGS{Moers:129286,
      author       = {Moers, Jürgen and Gerharz, Julian and Mussler, Gregor and
                      Grützmacher, Detlev},
      title        = {{T}he d-{D}ot{FET}: {MOSFET} based on locally strained
                      silicon},
      publisher    = {Slovakian Academy of Science},
      reportid     = {FZJ-2013-00802},
      isbn         = {978-1-4673-1195-3},
      year         = {2012},
      month         = {Nov},
      date          = {2012-11-11},
      organization  = {9th International Conference on
                       Advanced Semiconductors Devices and
                       Microsystems ASDAM 2012, Smolenice
                       (Slovakia), 11 Nov 2012 - 15 Nov 2012},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)26},
      url          = {https://juser.fz-juelich.de/record/129286},
}