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| Hauptseite > Publikationsdatenbank > The d-DotFET: MOSFET based on locally strained silicon > print |
| 001 | 129286 | ||
| 005 | 20210129211242.0 | ||
| 020 | _ | _ | |a 978-1-4673-1195-3 |
| 037 | _ | _ | |a FZJ-2013-00802 |
| 100 | 1 | _ | |a Moers, Jürgen |0 P:(DE-Juel1)128616 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 9th International Conference on Advanced Semiconductors Devices and Microsystems ASDAM 2012 |w Slovakia |c Smolenice |d 2012-11-11 - 2012-11-15 |g ASDAM 2012 |
| 245 | _ | _ | |a The d-DotFET: MOSFET based on locally strained silicon |
| 260 | _ | _ | |c 2012 |b Slovakian Academy of Science |
| 336 | 7 | _ | |a Proceedings |b proc |m proc |0 PUB:(DE-HGF)26 |s 1361289091_4833 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a PROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a BOOK |2 ORCID |
| 336 | 7 | _ | |a Output Types/Book |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a Conference Proceedings |0 3 |2 EndNote |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 700 | 1 | _ | |a Gerharz, Julian |0 P:(DE-Juel1)125586 |b 1 |
| 700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 2 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 3 |
| 909 | C | O | |o oai:juser.fz-juelich.de:129286 |p VDB |
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| 914 | 1 | _ | |y 2012 |
| 920 | _ | _ | |l yes |
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