%0 Conference Paper
%A Trellenkamp, Stefan
%A Mikulics, Martin
%A Winden, Andreas
%A Adam, Roman
%A Moers, Jürgen
%A Marso,
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
%I IEEE
%M FZJ-2013-00881
%@ 978-1-4673-1195-3
%P 223-226
%D 2012
%X We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.
%B The Ninth International Conference on Advanced Semiconductor Devices and Microsystems
%C 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2 11 Nov 2012 - 15 Nov 2012
M2 Smolenice, Slovakia
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%U <Go to ISI:>//WOS:000316566500053
%U https://juser.fz-juelich.de/record/129365