Contribution to a conference proceedings

FZJ-2013-00881

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control

Trellenkamp, S. (Corresponding author) ; Mikulics, M.FZJ* ; Winden, A.FZJ* ; Adam, R.FZJ* ; Moers, J.FZJ* ; Marso, ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2012
IEEE
ISBN: 978-1-4673-1195-3

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Abstract: We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)
2. Halbleiter-Nanoelektronik (PGI-9)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
4. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2012

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