000129365 001__ 129365
000129365 005__ 20210129211250.0
000129365 0247_ $$2WOS$$aWOS:000316566500053
000129365 020__ $$a978-1-4673-1195-3
000129365 037__ $$aFZJ-2013-00881
000129365 041__ $$aEnglish
000129365 1001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b0$$eCorresponding author
000129365 1112_ $$aThe Ninth International Conference on Advanced Semiconductor Devices and Microsystems$$cSmolenice$$d2012-11-11 - 2012-11-15$$gASDAM$$wSlovakia
000129365 245__ $$aTuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
000129365 260__ $$bIEEE$$c2012
000129365 300__ $$a320 p
000129365 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1361290263_4832
000129365 3367_ $$033$$2EndNote$$aConference Paper
000129365 3367_ $$2ORCID$$aCONFERENCE_PAPER
000129365 3367_ $$2DataCite$$aOutput Types/Conference Paper
000129365 3367_ $$2DRIVER$$aconferenceObject
000129365 3367_ $$2BibTeX$$aINPROCEEDINGS
000129365 500__ $$3POF3_Assignment on 2016-02-29
000129365 520__ $$aWe fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.
000129365 536__ $$0G:(DE-HGF)POF2-423$$a423 - Sensorics and bioinspired systems (POF2-423)$$cPOF2-423$$fPOF II$$x0
000129365 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1
000129365 7001_ $$0P:(DE-Juel1)144014$$aWinden, Andreas$$b2
000129365 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b3
000129365 7001_ $$0P:(DE-Juel1)128616$$aMoers, Jürgen$$b4
000129365 7001_ $$0P:(DE-HGF)0$$aMarso,$$b5
000129365 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6
000129365 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b7
000129365 770__ $$aProceedings of The Ninth International Conference on Advanced Semiconductor Devices and Microsystems$$z978-1-4673-1195-3
000129365 773__ $$p223-226
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000129365 9141_ $$y2012
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000129365 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144014$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
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000129365 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
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000129365 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000129365 9131_ $$0G:(DE-HGF)POF2-423$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSensorics and bioinspired systems$$x0
000129365 920__ $$lyes
000129365 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000129365 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x1
000129365 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
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