TY  - CONF
AU  - Trellenkamp, Stefan
AU  - Mikulics, Martin
AU  - Winden, Andreas
AU  - Adam, Roman
AU  - Moers, Jürgen
AU  - Marso,
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
PB  - IEEE
M1  - FZJ-2013-00881
SN  - 978-1-4673-1195-3
SP  - 223-226
PY  - 2012
AB  - We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.
T2  - The Ninth International Conference on Advanced Semiconductor Devices and Microsystems
CY  - 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2  - 11 Nov 2012 - 15 Nov 2012
M2  - Smolenice, Slovakia
LB  - PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:000316566500053
UR  - https://juser.fz-juelich.de/record/129365
ER  -