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| Hauptseite > Publikationsdatenbank > Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control > print |
| Hauptseite > Publikationsdatenbank > Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control > print |
| 001 | 129365 | ||
| 005 | 20210129211250.0 | ||
| 020 | _ | _ | |a 978-1-4673-1195-3 |
| 024 | 7 | _ | |2 WOS |a WOS:000316566500053 |
| 037 | _ | _ | |a FZJ-2013-00881 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-Juel1)128856 |a Trellenkamp, Stefan |b 0 |e Corresponding author |
| 111 | 2 | _ | |a The Ninth International Conference on Advanced Semiconductor Devices and Microsystems |g ASDAM |c Smolenice |d 2012-11-11 - 2012-11-15 |w Slovakia |
| 245 | _ | _ | |a Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control |
| 260 | _ | _ | |b IEEE |c 2012 |
| 300 | _ | _ | |a 320 p |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1361290263_4832 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range. |
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| 700 | 1 | _ | |0 P:(DE-Juel1)128613 |a Mikulics, Martin |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)144014 |a Winden, Andreas |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130495 |a Adam, Roman |b 3 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128616 |a Moers, Jürgen |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Marso, |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125588 |a Grützmacher, Detlev |b 6 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125593 |a Hardtdegen, Hilde |b 7 |
| 770 | _ | _ | |a Proceedings of The Ninth International Conference on Advanced Semiconductor Devices and Microsystems |z 978-1-4673-1195-3 |
| 773 | _ | _ | |p 223-226 |
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