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005     20210129211250.0
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100 1 _ |0 P:(DE-Juel1)128856
|a Trellenkamp, Stefan
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111 2 _ |a The Ninth International Conference on Advanced Semiconductor Devices and Microsystems
|g ASDAM
|c Smolenice
|d 2012-11-11 - 2012-11-15
|w Slovakia
245 _ _ |a Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
260 _ _ |b IEEE
|c 2012
300 _ _ |a 320 p
336 7 _ |a Contribution to a conference proceedings
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500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ~ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range.
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700 1 _ |0 P:(DE-Juel1)128613
|a Mikulics, Martin
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700 1 _ |0 P:(DE-Juel1)144014
|a Winden, Andreas
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700 1 _ |0 P:(DE-Juel1)130495
|a Adam, Roman
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700 1 _ |0 P:(DE-Juel1)128616
|a Moers, Jürgen
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|a Marso,
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700 1 _ |0 P:(DE-Juel1)125588
|a Grützmacher, Detlev
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700 1 _ |0 P:(DE-Juel1)125593
|a Hardtdegen, Hilde
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770 _ _ |a Proceedings of The Ninth International Conference on Advanced Semiconductor Devices and Microsystems
|z 978-1-4673-1195-3
773 _ _ |p 223-226
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