Home > Workflow collections > Public records > Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV > print

001     132041
005     20210129211335.0
024 7 _ |a 10.1063/1.4789524
|2 doi
024 7 _ |a 1077-3118
|2 ISSN
024 7 _ |a 0003-6951
|2 ISSN
024 7 _ |a WOS:000314032600028
|2 WOS
024 7 _ |a 2128/5014
|2 Handle
037 _ _ |a FZJ-2013-01284
082 _ _ |a 530
100 1 _ |a Nichau, Alexander
|0 P:(DE-Juel1)128618
|b 0
|e Corresponding author
245 _ _ |a Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
260 _ _ |a Melville, NY
|c 2013
|b American Institute of Physics
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 132041
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a To obtain quantitative depth information from hard X-ray photoemission spectroscopy, the effective attenuation length (EAL) is required. In this paper, the EAL was determined for LaLuO3 for electron kinetic energies between 7 and 13 keV. As a result, the EAL is in the range of 100–150A ° for the investigated photon energies. In addition, higher binding energy orbitals of La and Lu were measured and are discussed. LaLuO3 is a promising high-k dielectric for future nano-scaled MOS devices.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|f POF II
|x 0
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Rubio-Zuazo, J.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Schnee, Michael
|0 P:(DE-Juel1)139578
|b 2
700 1 _ |a Castro, G. R.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Schubert, Jürgen
|0 P:(DE-Juel1)128631
|b 4
700 1 _ |a Mantl, Siegfried
|0 P:(DE-Juel1)128609
|b 5
773 _ _ |a 10.1063/1.4789524
|g Vol. 102, no. 3, p. 031607 -
|0 PERI:(DE-600)1469436-0
|n 3
|p 031607
|t Applied physics letters
|v 102
|y 2013
|x 0003-6951
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-2013-01284.pdf
|y OpenAccess
856 4 _ |y Published under German "Allianz" Licensing conditions on 2013-01-25. Available in OpenAccess from 2013-01-25
|z Published final document.
|u https://juser.fz-juelich.de/record/132041/files/FZJ-132041.pdf
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-132041.jpg?subformat=icon-1440
|x icon-1440
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-132041.jpg?subformat=icon-180
|x icon-180
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-132041.jpg?subformat=icon-640
|x icon-640
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-2013-01284.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-2013-01284.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/132041/files/FZJ-2013-01284.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 _ _ |p OA
|o oai:juser.fz-juelich.de:132041
909 C O |o oai:juser.fz-juelich.de:132041
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)128618
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)139578
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)128631
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)128609
910 1 _ |0 I:(DE-588b)5008462-8
910 1 _ |k FZJ
910 1 _ |a Forschungszentrum Jülich GmbH
910 1 _ |6 P:(DE-Juel1)128631
910 1 _ |b 4
913 2 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-529H
|2 G:(DE-HGF)POF3-500
|v Addenda
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2013
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a Allianz-Lizenz / DFG
|0 StatID:(DE-HGF)0400
|2 StatID
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a Allianz-OA
|0 StatID:(DE-HGF)0520
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1020
|2 StatID
|b Current Contents - Social and Behavioral Sciences
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
920 1 _ |0 I:(DE-Juel1)PGI-6-20110106
|k PGI-6
|l Elektronische Eigenschaften
|x 2
980 1 _ |a FullTexts
980 _ _ |a journal
980 _ _ |a UNRESTRICTED
980 _ _ |a JUWEL
980 _ _ |a FullTexts
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a I:(DE-Juel1)PGI-6-20110106
980 _ _ |a VDB
981 _ _ |a I:(DE-Juel1)PGI-6-20110106
981 _ _ |a I:(DE-Juel1)VDB881

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21