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Journal Article | FZJ-2013-01284 |
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2013
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/5014 doi:10.1063/1.4789524
Abstract: To obtain quantitative depth information from hard X-ray photoemission spectroscopy, the effective attenuation length (EAL) is required. In this paper, the EAL was determined for LaLuO3 for electron kinetic energies between 7 and 13 keV. As a result, the EAL is in the range of 100–150A ° for the investigated photon energies. In addition, higher binding energy orbitals of La and Lu were measured and are discussed. LaLuO3 is a promising high-k dielectric for future nano-scaled MOS devices.
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