Journal Article

FZJ-2013-01439

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

Eichel, R.-A. (Corresponding author)FZJ* ; Jakes, P.FZJ* ; Hoffmann, ; Kaloumenos, ; Heinschke, S. ; Erdem, ; Schneider,

2013
RSC London {[u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1039/c3tc00841j

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Contributing Institute(s):

1. Grundlagen der Elektrochemie (IEK-9)

Research Program(s):

1. 152 - Renewable Energies (POF2-152) (POF2-152)

Appears in the scientific report 2013

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