%0 Journal Article
%A Mikulics, M.
%A Stoklas, R.
%A Dadgar, A.
%A Gregusová, D.
%A Novák, J.
%A Grützmacher, D.
%A Krost, A.
%A Kordos, P.
%T InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN
%J Applied physics letters
%V 97
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-13287
%P 173505
%D 2010
%Z The work reported here was supported by the Slovak Research and Development Agency APVV (Grant No. LPP-0162-09) and the Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two of the authors (A.D. and A.K.) would like to thank the Deutsche Forschungsgemeinschaft in the framework of the collaborative research group PolarCon 957.
%X Properties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with decreased InN mole fraction. The saturation drain current as well as the peak extrinsic transconductance increased inversely proportional to the InN mole fraction-from 1 A/mm to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the other hand, the threshold voltage shifted to higher values with increased InN mole fraction. The pulsed current-voltage measurements (1 mu s pulse width) yielded relatively low and nearly identical gate lag for all devices investigated. These results show that InAlN/GaN heterostructures with tensely strained InAlN can be useful for high-frequency and high-power devices and with compressively strained InAlN might be useful for the preparation of enhancement mode GaN-based devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3507885]
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000284233600063
%R 10.1063/1.3507885
%U https://juser.fz-juelich.de/record/13287