InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.; Gregusová, D.; Krost, A.; Kordos, P.; Dadgar, A.; Stoklas, R.; Novák, J.; Grützmacher, D.

doi:10.1063/1.3507885

Journal Article

InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.FZJ* ; Stoklas, R. ; Dadgar, A. ; Gregusová, D. ; Novák, J. ; Grützmacher, D.FZJ* ; Krost, A. ; Kordos, P.

2010
American Institute of Physics Melville, NY

Applied physics letters 97, 173505 (2010) [10.1063/1.3507885]

This record in other databases:

Please use a persistent id in citations: http://hdl.handle.net/2128/18106 doi:10.1063/1.3507885

Abstract: Properties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with decreased InN mole fraction. The saturation drain current as well as the peak extrinsic transconductance increased inversely proportional to the InN mole fraction-from 1 A/mm to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the other hand, the threshold voltage shifted to higher values with increased InN mole fraction. The pulsed current-voltage measurements (1 mu s pulse width) yielded relatively low and nearly identical gate lag for all devices investigated. These results show that InAlN/GaN heterostructures with tensely strained InAlN can be useful for high-frequency and high-power devices and with compressively strained InAlN might be useful for the preparation of enhancement mode GaN-based devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3507885]

Keyword(s): J

Classification:

Physics, Applied

Note: The work reported here was supported by the Slovak Research and Development Agency APVV (Grant No. LPP-0162-09) and the Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two of the authors (A.D. and A.K.) would like to thank the Deutsche Forschungsgemeinschaft in the framework of the collaborative research group PolarCon 957.

Contributing Institute(s):

Research Program(s):