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000013287 084__ $$2WoS$$aPhysics, Applied
000013287 1001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b0$$uFZJ
000013287 245__ $$aInAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN
000013287 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000013287 300__ $$a173505
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000013287 440_0 $$0562$$aApplied Physics Letters$$v97$$x0003-6951$$y17
000013287 500__ $$aThe work reported here was supported by the Slovak Research and Development Agency APVV (Grant No. LPP-0162-09) and the Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two of the authors (A.D. and A.K.) would like to thank the Deutsche Forschungsgemeinschaft in the framework of the collaborative research group PolarCon 957.
000013287 520__ $$aProperties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with decreased InN mole fraction. The saturation drain current as well as the peak extrinsic transconductance increased inversely proportional to the InN mole fraction-from 1 A/mm to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the other hand, the threshold voltage shifted to higher values with increased InN mole fraction. The pulsed current-voltage measurements (1 mu s pulse width) yielded relatively low and nearly identical gate lag for all devices investigated. These results show that InAlN/GaN heterostructures with tensely strained InAlN can be useful for high-frequency and high-power devices and with compressively strained InAlN might be useful for the preparation of enhancement mode GaN-based devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3507885]
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000013287 7001_ $$0P:(DE-HGF)0$$aStoklas, R.$$b1
000013287 7001_ $$0P:(DE-HGF)0$$aDadgar, A.$$b2
000013287 7001_ $$0P:(DE-HGF)0$$aGregusová, D.$$b3
000013287 7001_ $$0P:(DE-HGF)0$$aNovák, J.$$b4
000013287 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b5$$uFZJ
000013287 7001_ $$0P:(DE-HGF)0$$aKrost, A.$$b6
000013287 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b7
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000013287 8567_ $$uhttp://dx.doi.org/10.1063/1.3507885
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