TY  - JOUR
AU  - Mikulics, M.
AU  - Stoklas, R.
AU  - Dadgar, A.
AU  - Gregusová, D.
AU  - Novák, J.
AU  - Grützmacher, D.
AU  - Krost, A.
AU  - Kordos, P.
TI  - InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN
JO  - Applied physics letters
VL  - 97
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-13287
SP  - 173505
PY  - 2010
N1  - The work reported here was supported by the Slovak Research and Development Agency APVV (Grant No. LPP-0162-09) and the Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two of the authors (A.D. and A.K.) would like to thank the Deutsche Forschungsgemeinschaft in the framework of the collaborative research group PolarCon 957.
AB  - Properties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with decreased InN mole fraction. The saturation drain current as well as the peak extrinsic transconductance increased inversely proportional to the InN mole fraction-from 1 A/mm to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the other hand, the threshold voltage shifted to higher values with increased InN mole fraction. The pulsed current-voltage measurements (1 mu s pulse width) yielded relatively low and nearly identical gate lag for all devices investigated. These results show that InAlN/GaN heterostructures with tensely strained InAlN can be useful for high-frequency and high-power devices and with compressively strained InAlN might be useful for the preparation of enhancement mode GaN-based devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3507885]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000284233600063
DO  - DOI:10.1063/1.3507885
UR  - https://juser.fz-juelich.de/record/13287
ER  -