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@ARTICLE{Mikulics:13287,
      author       = {Mikulics, M. and Stoklas, R. and Dadgar, A. and Gregusová,
                      D. and Novák, J. and Grützmacher, D. and Krost, A. and
                      Kordos, P.},
      title        = {{I}n{AIM}/{G}a{N}/{S}i heterostructures and field-effect
                      transistors with lattice matched and tensely or
                      compressively strained {I}n{AIN}},
      journal      = {Applied physics letters},
      volume       = {97},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-13287},
      pages        = {173505},
      year         = {2010},
      note         = {The work reported here was supported by the Slovak Research
                      and Development Agency APVV (Grant No. LPP-0162-09) and the
                      Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two
                      of the authors (A.D. and A.K.) would like to thank the
                      Deutsche Forschungsgemeinschaft in the framework of the
                      collaborative research group PolarCon 957.},
      abstract     = {Properties of InAlN/GaN heterostructures and field-effect
                      transistors with nearly lattice matched $(InN=18\%)$ and
                      tensely $(13\%)$ or compressively $(21\%)$ strained InAlN
                      barrier layer were evaluated. The sheet charge density
                      increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with
                      decreased InN mole fraction. The saturation drain current as
                      well as the peak extrinsic transconductance increased
                      inversely proportional to the InN mole fraction-from 1 A/mm
                      to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the
                      other hand, the threshold voltage shifted to higher values
                      with increased InN mole fraction. The pulsed current-voltage
                      measurements (1 mu s pulse width) yielded relatively low and
                      nearly identical gate lag for all devices investigated.
                      These results show that InAlN/GaN heterostructures with
                      tensely strained InAlN can be useful for high-frequency and
                      high-power devices and with compressively strained InAlN
                      might be useful for the preparation of enhancement mode
                      GaN-based devices. (C) 2010 American Institute of Physics.
                      [doi: 10.1063/1.3507885]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000284233600063},
      doi          = {10.1063/1.3507885},
      url          = {https://juser.fz-juelich.de/record/13287},
}