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| Hauptseite > Publikationsdatenbank > InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN > print |
| Hauptseite > Publikationsdatenbank > InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN > print |
| 001 | 13287 | ||
| 005 | 20200604161401.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3507885 |
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| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-Juel1)128613 |a Mikulics, M. |b 0 |u FZJ |
| 245 | _ | _ | |a InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 173505 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
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| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 97 |x 0003-6951 |y 17 |
| 500 | _ | _ | |a The work reported here was supported by the Slovak Research and Development Agency APVV (Grant No. LPP-0162-09) and the Centre of Excellence CENAMOST (Grant No. VVCE-0049-07). Two of the authors (A.D. and A.K.) would like to thank the Deutsche Forschungsgemeinschaft in the framework of the collaborative research group PolarCon 957. |
| 520 | _ | _ | |a Properties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density increased from 1.1 x 10(13) to 2.2 x 10(13) cm(-2) with decreased InN mole fraction. The saturation drain current as well as the peak extrinsic transconductance increased inversely proportional to the InN mole fraction-from 1 A/mm to 1.4 A/mm (V-G=2 V) and from 190 to 230 mS/mm. On the other hand, the threshold voltage shifted to higher values with increased InN mole fraction. The pulsed current-voltage measurements (1 mu s pulse width) yielded relatively low and nearly identical gate lag for all devices investigated. These results show that InAlN/GaN heterostructures with tensely strained InAlN can be useful for high-frequency and high-power devices and with compressively strained InAlN might be useful for the preparation of enhancement mode GaN-based devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3507885] |
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| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3507885 |g Vol. 97, p. 173505 |p 173505 |q 97<173505 |t Applied physics letters |v 97 |x 0003-6951 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3507885 |
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