%0 Journal Article
%A Biermanns, Andreas
%A Rieger, Torsten
%A Bussone, Genziana
%A Pietsch, Ullrich
%A Grützmacher, Detlev
%A Lepsa, Mihail Ion
%T Axial strain in GaAs/InAs core-shell nanowires
%J Applied physics letters
%V 102
%N 4
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-02054
%P 043109 -
%D 2013
%X We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000314723600077
%R 10.1063/1.4790185
%U https://juser.fz-juelich.de/record/133639