Journal Article

FZJ-2013-02054

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Axial strain in GaAs/InAs core-shell nanowires

Biermanns, A. (Corresponding author) ; Rieger, T.FZJ* ; Bussone, G. ; Pietsch, U. ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2013
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/5095  doi:10.1063/1.4790185

Abstract: We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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