000133639 001__ 133639
000133639 005__ 20210129211514.0
000133639 0247_ $$2doi$$a10.1063/1.4790185
000133639 0247_ $$2ISSN$$a1077-3118
000133639 0247_ $$2ISSN$$a0003-6951
000133639 0247_ $$2WOS$$aWOS:000314723600077
000133639 0247_ $$2Handle$$a2128/5095
000133639 037__ $$aFZJ-2013-02054
000133639 082__ $$a530
000133639 1001_ $$0P:(DE-HGF)0$$aBiermanns, Andreas$$b0$$eCorresponding author
000133639 245__ $$aAxial strain in GaAs/InAs core-shell nanowires
000133639 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
000133639 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s133639
000133639 3367_ $$2DataCite$$aOutput Types/Journal article
000133639 3367_ $$00$$2EndNote$$aJournal Article
000133639 3367_ $$2BibTeX$$aARTICLE
000133639 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000133639 3367_ $$2DRIVER$$aarticle
000133639 500__ $$3POF3_Assignment on 2016-02-29
000133639 520__ $$aWe study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.
000133639 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000133639 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000133639 7001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b1$$ufzj
000133639 7001_ $$0P:(DE-HGF)0$$aBussone, Genziana$$b2
000133639 7001_ $$0P:(DE-HGF)0$$aPietsch, Ullrich$$b3
000133639 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b4$$ufzj
000133639 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b5$$ufzj
000133639 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4790185$$gVol. 102, no. 4, p. 043109 -$$n4$$p043109 -$$tApplied physics letters$$v102$$x0003-6951$$y2013
000133639 8564_ $$yPublished under German "Allianz" Licensing conditions on 2012-01-30. Available in OpenAccess from 2012-01-30$$zPublished final document.
000133639 8564_ $$uhttps://juser.fz-juelich.de/record/133639/files/FZJ-133639.pdf$$yPublished under German "Allianz" Licensing conditions on 2012-01-30. Available in OpenAccess from 2012-01-30$$zPublished final document.
000133639 8564_ $$uhttps://juser.fz-juelich.de/record/133639/files/FZJ-133639.jpg?subformat=icon-1440$$xicon-1440
000133639 8564_ $$uhttps://juser.fz-juelich.de/record/133639/files/FZJ-133639.jpg?subformat=icon-180$$xicon-180
000133639 8564_ $$uhttps://juser.fz-juelich.de/record/133639/files/FZJ-133639.jpg?subformat=icon-640$$xicon-640
000133639 909CO $$ooai:juser.fz-juelich.de:133639$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000133639 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141766$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000133639 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000133639 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128603$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000133639 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000133639 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000133639 9141_ $$y2013
000133639 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000133639 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000133639 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000133639 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000133639 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000133639 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000133639 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000133639 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000133639 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000133639 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000133639 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000133639 915__ $$0StatID:(DE-HGF)0520$$2StatID$$aAllianz-OA
000133639 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000133639 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000133639 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000133639 9801_ $$aFullTexts
000133639 980__ $$ajournal
000133639 980__ $$aUNRESTRICTED
000133639 980__ $$aJUWEL
000133639 980__ $$aFullTexts
000133639 980__ $$aI:(DE-Juel1)PGI-9-20110106
000133639 980__ $$aI:(DE-82)080009_20140620
000133639 980__ $$aVDB