TY  - JOUR
AU  - Biermanns, Andreas
AU  - Rieger, Torsten
AU  - Bussone, Genziana
AU  - Pietsch, Ullrich
AU  - Grützmacher, Detlev
AU  - Lepsa, Mihail Ion
TI  - Axial strain in GaAs/InAs core-shell nanowires
JO  - Applied physics letters
VL  - 102
IS  - 4
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-02054
SP  - 043109 -
PY  - 2013
AB  - We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000314723600077
DO  - DOI:10.1063/1.4790185
UR  - https://juser.fz-juelich.de/record/133639
ER  -