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@ARTICLE{Biermanns:133639,
author = {Biermanns, Andreas and Rieger, Torsten and Bussone,
Genziana and Pietsch, Ullrich and Grützmacher, Detlev and
Lepsa, Mihail Ion},
title = {{A}xial strain in {G}a{A}s/{I}n{A}s core-shell nanowires},
journal = {Applied physics letters},
volume = {102},
number = {4},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2013-02054},
pages = {043109 -},
year = {2013},
abstract = {We study the axial strain relaxation in GaAs/InAs
core-shell nanowire heterostructures grown by molecular beam
epitaxy. Besides a gradual strain relaxation of the shell
material, we find a significant strain in the GaAs core,
increasing with shell thickness. This strain is explained by
a saturation of the dislocation density at the core-shell
interface. Independent measurements of core and shell
lattice parameters by x-ray diffraction reveal a relaxation
of $93\%$ in a 35 nm thick InAs shell surrounding cores of
80 nm diameter. The compressive strain of $−0.5\%$
compared to bulk InAs is accompanied by a tensile strain up
to $0.9\%$ in the GaAs core.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000314723600077},
doi = {10.1063/1.4790185},
url = {https://juser.fz-juelich.de/record/133639},
}