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| Hauptseite > Workflowsammlungen > Öffentliche Einträge > Axial strain in GaAs/InAs core-shell nanowires > print |
| Hauptseite > Workflowsammlungen > Öffentliche Einträge > Axial strain in GaAs/InAs core-shell nanowires > print |
| 001 | 133639 | ||
| 005 | 20210129211514.0 | ||
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| 100 | 1 | _ | |a Biermanns, Andreas |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Axial strain in GaAs/InAs core-shell nanowires |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
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| 520 | _ | _ | |a We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core. |
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