%0 Journal Article
%A Wirths, Stephan
%A Buca, Dan Mihai
%A Tiedemann, Andreas
%A Bernardy, Patric
%A Holländer, Bernhard
%A Stoica, Toma
%A Mussler, Gregor
%A Breuer, Udo-Werner
%A Mantl, Siegfried
%T Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
%J Solid state electronics
%V 83
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M FZJ-2013-02238
%P 2 - 9
%D 2013
%X The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450–600 °C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 °C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3 were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 °C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 × 1020 cm−3 for P at 500 °C and 4 × 1020 cm−3 for B doping at 600 °C.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000318464500002
%R 10.1016/j.sse.2013.01.032
%U https://juser.fz-juelich.de/record/133847