Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, Stephan; Stoica, Toma; Mantl, Siegfried; Bernardy, Patric; Holländer, Bernhard; Mussler, Gregor; Breuer, Udo-Werner; Tiedemann, Andreas; Buca, Dan Mihai

doi:10.1016/j.sse.2013.01.032

Journal Article

FZJ-2013-02238

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, S. (Corresponding author)FZJ* ; Buca, D. M.FZJ* ; Tiedemann, A.FZJ* ; Bernardy, P.FZJ* ; Holländer, B.FZJ* ; Stoica, T.FZJ* ; Mussler, G.FZJ* ; Breuer, U.-W.FZJ* ; Mantl, S.FZJ*

2013
Pergamon, Elsevier Science Oxford [u.a.]

Solid state electronics 83, 2 - 9 (2013) [10.1016/j.sse.2013.01.032]

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Abstract: The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450–600 °C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 °C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3 were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 °C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 × 1020 cm−3 for P at 500 °C and 4 × 1020 cm−3 for B doping at 600 °C.

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