TY  - JOUR
AU  - Wirths, Stephan
AU  - Buca, Dan Mihai
AU  - Tiedemann, Andreas
AU  - Bernardy, Patric
AU  - Holländer, Bernhard
AU  - Stoica, Toma
AU  - Mussler, Gregor
AU  - Breuer, Udo-Werner
AU  - Mantl, Siegfried
TI  - Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
JO  - Solid state electronics
VL  - 83
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2013-02238
SP  - 2 - 9
PY  - 2013
AB  - The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450–600 °C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 °C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3 were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 °C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 × 1020 cm−3 for P at 500 °C and 4 × 1020 cm−3 for B doping at 600 °C.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000318464500002
DO  - DOI:10.1016/j.sse.2013.01.032
UR  - https://juser.fz-juelich.de/record/133847
ER  -