% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Wirths:133847,
      author       = {Wirths, Stephan and Buca, Dan Mihai and Tiedemann, Andreas
                      and Bernardy, Patric and Holländer, Bernhard and Stoica,
                      Toma and Mussler, Gregor and Breuer, Udo-Werner and Mantl,
                      Siegfried},
      title        = {{L}ow temperature {RPCVD} epitaxial growth of
                      {S}i1−x{G}ex using {S}i2{H}6 and {G}e2{H}6},
      journal      = {Solid state electronics},
      volume       = {83},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2013-02238},
      pages        = {2 - 9},
      year         = {2013},
      abstract     = {The growth of intrinsic SiGe and, n- and p-type doping of
                      Si and SiGe layers was studied using a Reduced Pressure
                      Chemical Vapor Deposition AIXTRON TRICENT® cluster tool.
                      Most emphasis was placed on the growth kinetics in the low
                      temperature regime of 450–600 °C which is characterized
                      by surface limited reactions. A low growth activation energy
                      of 0.667 eV was achieved by using Si2H6 and Ge2H6
                      precursors. Fully strained SiGe layers with Ge contents up
                      to $53\%$ at a record thickness of 29 nm were grown at a
                      very low growth temperature of 450 °C. The dopant
                      incorporation in Si strongly increases with the B2H6 flux
                      but saturates rapidly with increasing PH3 flow. High dopant
                      concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3
                      were obtained for Si:P and Si:B doping, respectively, at a
                      growth temperature of 600 °C. For Si0.56Ge0.44 layers the
                      maximum dopant concentrations achieved were 5 × 1020 cm−3
                      for P at 500 °C and 4 × 1020 cm−3 for B doping at 600
                      °C.},
      cin          = {PGI-9 / ZEA-3 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000318464500002},
      doi          = {10.1016/j.sse.2013.01.032},
      url          = {https://juser.fz-juelich.de/record/133847},
}