Hauptseite > Publikationsdatenbank > Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6 > print

001     133847
005     20210129211541.0
024 7 _ |a 10.1016/j.sse.2013.01.032
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024 7 _ |a 1879-2405
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024 7 _ |a 0038-1101
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037 _ _ |a FZJ-2013-02238
041 _ _ |a English
082 _ _ |a 530
100 1 _ |a Wirths, Stephan
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|e Corresponding author
245 _ _ |a Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
260 _ _ |a Oxford [u.a.]
|c 2013
|b Pergamon, Elsevier Science
336 7 _ |a Journal Article
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500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT® cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450–600 °C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 °C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 × 1020 cm−3 and 1 × 1021 cm−3 were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 °C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 × 1020 cm−3 for P at 500 °C and 4 × 1020 cm−3 for B doping at 600 °C.
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700 1 _ |a Buca, Dan Mihai
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700 1 _ |a Tiedemann, Andreas
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700 1 _ |a Bernardy, Patric
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700 1 _ |a Holländer, Bernhard
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700 1 _ |a Stoica, Toma
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700 1 _ |a Mussler, Gregor
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773 _ _ |a 10.1016/j.sse.2013.01.032
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