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@ARTICLE{Heedt:133853,
      author       = {Heedt, Sebastian and Morgan, Caitlin and Weis, Karl and
                      Bürgler, D. E. and Calarco, R. and Hardtdegen, Hilde and
                      Grützmacher, Detlev and Schäpers, Thomas},
      title        = {{E}lectrical {S}pin {I}njection into {I}n{N}
                      {S}emiconductor {N}anowires},
      journal      = {Nano letters},
      volume       = {12},
      number       = {9},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2013-02244},
      pages        = {4437 - 4443},
      year         = {2012},
      abstract     = {We report on the conditions necessary for the electrical
                      injection of spin-polarized electrons into indium nitride
                      nanowires synthesized from the bottom up by molecular beam
                      epitaxy. The presented results mark the first unequivocal
                      evidence of spin injection into III-V semiconductor
                      nanowires. Utilizing a newly developed preparation scheme,
                      we are able to surmount shadowing effects during the metal
                      deposition. Thus, we avoid strong local anisotropies that
                      arise if the ferromagnetic leads are wrapping around the
                      nanowire. Using a combination of various complementary
                      techniques, inter alia the local Hall effect, we carried out
                      a comprehensive investigation of the coercive fields and
                      switching behaviors of the cobalt micromagnetic spin probes.
                      This enables the identification of a range of aspect ratios
                      in which the mechanism of magnetization reversal is single
                      domain switching. Lateral nanowire spin valves were
                      prepared. The spin relaxation length is demonstrated to be
                      about 200 nm, which provides an incentive to pursue the
                      route toward nanowire spin logic devices.},
      cin          = {PGI-9 / PGI-6 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000308576000004},
      pubmed       = {pmid:22889199},
      doi          = {10.1021/nl301052g},
      url          = {https://juser.fz-juelich.de/record/133853},
}