Journal Article

FZJ-2013-02244

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical Spin Injection into InN Semiconductor Nanowires

Heedt, S. (Corresponding author)FZJ* ; Morgan, C.FZJ* ; Weis, K.FZJ* ; Bürgler, D. E. ; Calarco, R. ; Hardtdegen, H.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2012
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl301052g

Abstract: We report on the conditions necessary for the electrical injection of spin-polarized electrons into indium nitride nanowires synthesized from the bottom up by molecular beam epitaxy. The presented results mark the first unequivocal evidence of spin injection into III-V semiconductor nanowires. Utilizing a newly developed preparation scheme, we are able to surmount shadowing effects during the metal deposition. Thus, we avoid strong local anisotropies that arise if the ferromagnetic leads are wrapping around the nanowire. Using a combination of various complementary techniques, inter alia the local Hall effect, we carried out a comprehensive investigation of the coercive fields and switching behaviors of the cobalt micromagnetic spin probes. This enables the identification of a range of aspect ratios in which the mechanism of magnetization reversal is single domain switching. Lateral nanowire spin valves were prepared. The spin relaxation length is demonstrated to be about 200 nm, which provides an incentive to pursue the route toward nanowire spin logic devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Elektronische Eigenschaften (PGI-6)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 422 - Spin-based and quantum information (POF2-422) (POF2-422)

Appears in the scientific report 2012

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Database coverage:
; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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