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| Hauptseite > Publikationsdatenbank > Electrical Spin Injection into InN Semiconductor Nanowires > print |
| Hauptseite > Publikationsdatenbank > Electrical Spin Injection into InN Semiconductor Nanowires > print |
| 001 | 133853 | ||
| 005 | 20210129211543.0 | ||
| 024 | 7 | _ | |a 10.1021/nl301052g |2 doi |
| 024 | 7 | _ | |a 1530-6992 |2 ISSN |
| 024 | 7 | _ | |a 1530-6984 |2 ISSN |
| 024 | 7 | _ | |a WOS:000308576000004 |2 WOS |
| 024 | 7 | _ | |a altmetric:21820229 |2 altmetric |
| 024 | 7 | _ | |a pmid:22889199 |2 pmid |
| 037 | _ | _ | |a FZJ-2013-02244 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Heedt, Sebastian |0 P:(DE-Juel1)140272 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Electrical Spin Injection into InN Semiconductor Nanowires |
| 260 | _ | _ | |a Washington, DC |c 2012 |b ACS Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1368703195_8628 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a We report on the conditions necessary for the electrical injection of spin-polarized electrons into indium nitride nanowires synthesized from the bottom up by molecular beam epitaxy. The presented results mark the first unequivocal evidence of spin injection into III-V semiconductor nanowires. Utilizing a newly developed preparation scheme, we are able to surmount shadowing effects during the metal deposition. Thus, we avoid strong local anisotropies that arise if the ferromagnetic leads are wrapping around the nanowire. Using a combination of various complementary techniques, inter alia the local Hall effect, we carried out a comprehensive investigation of the coercive fields and switching behaviors of the cobalt micromagnetic spin probes. This enables the identification of a range of aspect ratios in which the mechanism of magnetization reversal is single domain switching. Lateral nanowire spin valves were prepared. The spin relaxation length is demonstrated to be about 200 nm, which provides an incentive to pursue the route toward nanowire spin logic devices. |
| 536 | _ | _ | |a 422 - Spin-based and quantum information (POF2-422) |0 G:(DE-HGF)POF2-422 |c POF2-422 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Morgan, Caitlin |0 P:(DE-Juel1)130850 |b 1 |
| 700 | 1 | _ | |a Weis, Karl |0 P:(DE-Juel1)128645 |b 2 |
| 700 | 1 | _ | |a Bürgler, D. E. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Calarco, R. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 5 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 6 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 7 |
| 773 | _ | _ | |a 10.1021/nl301052g |0 PERI:(DE-600)2048866-X |n 9 |p 4437 - 4443 |t Nano letters |v 12 |
| 909 | C | O | |o oai:juser.fz-juelich.de:133853 |p VDB |
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| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)128634 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-422 |2 G:(DE-HGF)POF2-400 |v Spin-based and quantum information |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2012 |
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