%0 Journal Article
%A Pavunny, S. P.
%A Misra, P.
%A Thomas, R.
%A Kumar, A.
%A Schubert, Jürgen
%A Scott, J. F.
%A Katiyar, R. S.
%T Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
%J Applied physics letters
%V 102
%N 19
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-02543
%P 192904 -
%D 2013
%X Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ∼5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm−2 eV−1) and fixed (cm−2) charge densities of ∼1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000320440800071
%R 10.1063/1.4805037
%U https://juser.fz-juelich.de/record/134316