Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Pavunny, S. P.; Schubert, Jürgen; Katiyar, R. S.; Kumar, A.; Misra, P.; Thomas, R.; Scott, J. F.

doi:10.1063/1.4805037

Journal Article

FZJ-2013-02543

Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Pavunny, S. P. (Corresponding author) ; Misra, P. ; Thomas, R. ; Kumar, A. ; Schubert, J.FZJ* ; Scott, J. F. ; Katiyar, R. S.

2013
American Institute of Physics Melville, NY

Applied physics letters 102(19), 192904 - (2013) [10.1063/1.4805037]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17361 doi:10.1063/1.4805037

Abstract: Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ∼5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm−2 eV−1) and fixed (cm−2) charge densities of ∼1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling.

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