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000134316 1001_ $$0P:(DE-HGF)0$$aPavunny, S. P.$$b0$$eCorresponding author
000134316 245__ $$aAdvanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
000134316 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000134316 520__ $$aCareful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ∼5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm−2 eV−1) and fixed (cm−2) charge densities of ∼1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling.
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000134316 7001_ $$0P:(DE-HGF)0$$aMisra, P.$$b1
000134316 7001_ $$0P:(DE-HGF)0$$aThomas, R.$$b2
000134316 7001_ $$0P:(DE-HGF)0$$aKumar, A.$$b3
000134316 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b4
000134316 7001_ $$0P:(DE-HGF)0$$aScott, J. F.$$b5
000134316 7001_ $$0P:(DE-HGF)0$$aKatiyar, R. S.$$b6
000134316 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4805037$$n19$$p192904 -$$tApplied physics letters$$v102
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