TY  - JOUR
AU  - Pavunny, S. P.
AU  - Misra, P.
AU  - Thomas, R.
AU  - Kumar, A.
AU  - Schubert, Jürgen
AU  - Scott, J. F.
AU  - Katiyar, R. S.
TI  - Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
JO  - Applied physics letters
VL  - 102
IS  - 19
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-02543
SP  - 192904 -
PY  - 2013
AB  - Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ∼5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm−2 eV−1) and fixed (cm−2) charge densities of ∼1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000320440800071
DO  - DOI:10.1063/1.4805037
UR  - https://juser.fz-juelich.de/record/134316
ER  -