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@ARTICLE{Pavunny:134316,
      author       = {Pavunny, S. P. and Misra, P. and Thomas, R. and Kumar, A.
                      and Schubert, Jürgen and Scott, J. F. and Katiyar, R. S.},
      title        = {{A}dvanced high-k gate dielectric amorphous {L}a{G}d{O}3
                      gated metal-oxide-semiconductor devices with sub-nanometer
                      equivalent oxide thickness},
      journal      = {Applied physics letters},
      volume       = {102},
      number       = {19},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-02543},
      pages        = {192904 -},
      year         = {2013},
      abstract     = {Careful selection of pulsed laser deposition conditions was
                      executed to achieve sub-nanometer EOT (equivalent oxide
                      thickness) in amorphous LaGdO3 based high-k/metal gate
                      stacks. The lowest EOTs attained were ∼5.4 Å and
                      8.4 Å with and without quantum mechanical correction,
                      respectively. The electrical measurements yielded a high
                      permittivity of 20.5 ± 2.4, a thin bottom interfacial
                      layer of thickness 4.5 ± 1 Å, and interface
                      (cm−2 eV−1) and fixed (cm−2) charge densities of
                      ∼1012. Analysis of temperature dependent leakage currents
                      revealed that gate injection current was dominated by
                      Schottky emission below 1.2 MV/cm and quantum mechanical
                      tunneling above this field. The physical origin of substrate
                      injection was found to be a combination of Schottky emission
                      and trap assisted tunneling.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000320440800071},
      doi          = {10.1063/1.4805037},
      url          = {https://juser.fz-juelich.de/record/134316},
}