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| Hauptseite > Publikationsdatenbank > Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness > print |
| Hauptseite > Publikationsdatenbank > Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness > print |
| 001 | 134316 | ||
| 005 | 20210129211623.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4805037 |2 doi |
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| 024 | 7 | _ | |a 0003-6951 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2013-02543 |
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| 100 | 1 | _ | |a Pavunny, S. P. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1372073846_10437 |2 PUB:(DE-HGF) |
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| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were ∼5.4 Å and 8.4 Å with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 ± 2.4, a thin bottom interfacial layer of thickness 4.5 ± 1 Å, and interface (cm−2 eV−1) and fixed (cm−2) charge densities of ∼1012. Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling. |
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| 700 | 1 | _ | |a Katiyar, R. S. |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.1063/1.4805037 |0 PERI:(DE-600)1469436-0 |n 19 |p 192904 - |t Applied physics letters |v 102 |
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