TY  - JOUR
AU  - Wirths, S.
AU  - Tiedemann, Andreas
AU  - Ikonic, Z.
AU  - Harrison, P.
AU  - Holländer, Bernhard
AU  - Stoica, T.
AU  - Mussler, G.
AU  - Myronov, M.
AU  - Hartmann, J. M.
AU  - Grützmacher, D.
AU  - Buca, D.
AU  - Mantl, S.
TI  - Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
JO  - Applied physics letters
VL  - 102
IS  - 19
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-02545
SP  - 192103 -
PY  - 2013
AB  - In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge1−xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000320440800043
DO  - DOI:10.1063/1.4805034
UR  - https://juser.fz-juelich.de/record/134318
ER  -