Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S.; Harrison, P.; Mussler, G.; Buca, D.; Stoica, T.; Hartmann, J. M.; Ikonic, Z.; Holländer, Bernhard; Mantl, S.; Grützmacher, D.; Myronov, M.; Tiedemann, Andreas

doi:10.1063/1.4805034

Journal Article

FZJ-2013-02545

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S. (Corresponding author)FZJ* ; Tiedemann, A.FZJ* ; Ikonic, Z. ; Harrison, P. ; Holländer, B.FZJ* ; Stoica, T.FZJ* ; Mussler, G.FZJ* ; Myronov, M. ; Hartmann, J. M. ; Grützmacher, D.FZJ* ; Buca, D.FZJ* ; Mantl, S.FZJ*

2013
American Institute of Physics Melville, NY

Applied physics letters 102(19), 192103 - (2013) [10.1063/1.4805034]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17360 doi:10.1063/1.4805034

Abstract: In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge1−xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.

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