% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Wirths:134318,
      author       = {Wirths, S. and Tiedemann, Andreas and Ikonic, Z. and
                      Harrison, P. and Holländer, Bernhard and Stoica, T. and
                      Mussler, G. and Myronov, M. and Hartmann, J. M. and
                      Grützmacher, D. and Buca, D. and Mantl, S.},
      title        = {{B}and engineering and growth of tensile strained
                      {G}e/({S}i){G}e{S}n heterostructures for tunnel field effect
                      transistors},
      journal      = {Applied physics letters},
      volume       = {102},
      number       = {19},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-02545},
      pages        = {192103 -},
      year         = {2013},
      abstract     = {In this letter, we propose a heterostructure design for
                      tunnel field effect transistors with two low direct bandgap
                      group IV compounds, GeSn and highly tensely strained Ge in
                      combination with ternary SiGeSn alloy. Electronic band
                      calculations show that strained Ge, used as channel, grown
                      on Ge1−xSnx $(x > 9\%)$ buffer, as source, becomes a
                      direct bandgap which significantly increases the tunneling
                      probability. The SiGeSn ternaries are well suitable as drain
                      since they offer a large indirect bandgap. The growth of
                      such heterostructures with the desired band alignment is
                      presented. The crystalline quality of the (Si)Ge(Sn) layers
                      is similar to state-of-the-art SiGe layers.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000320440800043},
      doi          = {10.1063/1.4805034},
      url          = {https://juser.fz-juelich.de/record/134318},
}