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| Hauptseite > Publikationsdatenbank > Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors > print |
| Hauptseite > Publikationsdatenbank > Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors > print |
| 001 | 134318 | ||
| 005 | 20210129211623.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4805034 |2 doi |
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| 037 | _ | _ | |a FZJ-2013-02545 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Wirths, S. |0 P:(DE-Juel1)138778 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge1−xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers. |
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| 773 | _ | _ | |a 10.1063/1.4805034 |0 PERI:(DE-600)1469436-0 |n 19 |p 192103 - |t Applied physics letters |v 102 |
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