Journal Article

FZJ-2013-02681

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys

Wirths, S. (Corresponding author)FZJ* ; Buca, D.FZJ* ; Mussler, G.FZJ* ; Tiedemann, A.FZJ* ; Hollander, B.FZJ* ; Bernardy, P.FZJ* ; Stoica, T.FZJ* ; Grutzmacher, D.FZJ* ; Mantl, S.FZJ*

2013
ECS Pennington, NJ

This record in other databases:    

Please use a persistent id in citations: doi:10.1149/2.006305jss

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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