Journal Article FZJ-2013-03045

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Technology of InP-based 1.55-μm ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers

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1999
IEEE New York, NY

IEEE journal of quantum electronics 35(7), 1024 - 1031 () [10.1109/3.772171]

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Abstract: For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mobile access systems using 38- or 60-GHz carrier frequencies, ultrafast photoreceivers have to be provided. Therefore, an integration concept for InP-based optoelectronic microwave monolithic integrated circuits for the 1.55-μm wavelength regime is demonstrated, which allows independent optimization of the constituting devices. Two different types of photodetectors (PDs), a waveguide-integrated PIN photodiode (PD) and a top-illuminated metal-semiconductor-metal PD, both having bandwidths of up to 70 GHz, have been developed. These are fabricated together with different amplifier designs employing high electron mobility transistors which exhibit transit frequencies of up to 90 GHz. The application to a 40-Gbit/s broadband photoreceiver for high-bit-rate time-division multiplexing systems is reported, as well as the application to 38- and 60-GHz narrow-band photoreceivers for use as optic/millimeterwave converters in mobile communication systems

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Research Program(s):
  1. 899 - ohne Topic (POF2-899) (POF2-899)

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Medline ; BIOSIS Previews ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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The record appears in these collections:
Institute Collections > ZEA > ZEA-2
Institute Collections > PGI > PGI-4
External Publications > Vita Publications

 Record created 2013-07-08, last modified 2025-01-29



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