%0 Journal Article
%A Gerlach, D.
%A Wilks, R. G.
%A Wippler, D.
%A Wimmer, M.
%A Lozac'h, M.
%A Félix, R.
%A Mück, A.
%A Meier, Matthias
%A Ueda, S.
%A Yoshikawa, H.
%A Gorgoi, M.
%A Lips, K.
%A Rech, B.
%A Sumiya, M.
%A Hüpkes, J.
%A Kobayashi, K.
%A Bär, M.
%T The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
%J Applied physics letters
%V 103
%N 2
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-03080
%P 023903-1
%D 2013
%X The electronic structure of the interface between the boron-doped oxygenated amorphous silicon“window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated usinghard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystallinesilicon (lc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determinedto be (2.8760.27) eV and (3.3760.27) eV, respectively. A lower tunnel junction barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked to the higher device performances in cells where a lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000321761000095
%R 10.1063/1.4813448
%U https://juser.fz-juelich.de/record/135103