The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

Gerlach, D.; Wimmer, M.; Hüpkes, J.; Rech, B.; Bär, M.; Mück, A.; Sumiya, M.; Gorgoi, M.; Kobayashi, K.; Félix, R.; Lozac'h, M.; Ueda, S.; Meier, Matthias; Lips, K.; Wippler, D.; Wilks, R. G.; Yoshikawa, H.

doi:10.1063/1.4813448

Journal Article

FZJ-2013-03080

The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

Gerlach, D. (Corresponding author) ; Wilks, R. G. ; Wippler, D.FZJ* ; Wimmer, M. ; Lozac'h, M. ; Félix, R. ; Mück, A.FZJ* ; Meier, M.FZJ* ; Ueda, S. ; Yoshikawa, H. ; Gorgoi, M. ; Lips, K. ; Rech, B. ; Sumiya, M. ; Hüpkes, J.FZJ* ; Kobayashi, K. ; Bär, M.

2013
American Institute of Physics Melville, NY

Applied physics letters 103(2), 023903-1 (2013) [10.1063/1.4813448]

This record in other databases:

Please use a persistent id in citations: http://hdl.handle.net/2128/17354 doi:10.1063/1.4813448

Abstract: The electronic structure of the interface between the boron-doped oxygenated amorphous silicon“window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated usinghard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystallinesilicon (lc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determinedto be (2.8760.27) eV and (3.3760.27) eV, respectively. A lower tunnel junction barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked to the higher device performances in cells where a lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

Classification: