TY  - JOUR
AU  - Gerlach, D.
AU  - Wilks, R. G.
AU  - Wippler, D.
AU  - Wimmer, M.
AU  - Lozac'h, M.
AU  - Félix, R.
AU  - Mück, A.
AU  - Meier, Matthias
AU  - Ueda, S.
AU  - Yoshikawa, H.
AU  - Gorgoi, M.
AU  - Lips, K.
AU  - Rech, B.
AU  - Sumiya, M.
AU  - Hüpkes, J.
AU  - Kobayashi, K.
AU  - Bär, M.
TI  - The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
JO  - Applied physics letters
VL  - 103
IS  - 2
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-03080
SP  - 023903-1
PY  - 2013
AB  - The electronic structure of the interface between the boron-doped oxygenated amorphous silicon“window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated usinghard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystallinesilicon (lc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determinedto be (2.8760.27) eV and (3.3760.27) eV, respectively. A lower tunnel junction barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked to the higher device performances in cells where a lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000321761000095
DO  - DOI:10.1063/1.4813448
UR  - https://juser.fz-juelich.de/record/135103
ER  -