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@ARTICLE{Gerlach:135103,
      author       = {Gerlach, D. and Wilks, R. G. and Wippler, D. and Wimmer, M.
                      and Lozac'h, M. and Félix, R. and Mück, A. and Meier,
                      Matthias and Ueda, S. and Yoshikawa, H. and Gorgoi, M. and
                      Lips, K. and Rech, B. and Sumiya, M. and Hüpkes, J. and
                      Kobayashi, K. and Bär, M.},
      title        = {{T}he silicon/zinc oxide interface in amorphous
                      silicon-based thin-film solar cells: {U}nderstanding an
                      empirically optimized contact},
      journal      = {Applied physics letters},
      volume       = {103},
      number       = {2},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2013-03080},
      pages        = {023903-1},
      year         = {2013},
      abstract     = {The electronic structure of the interface between the
                      boron-doped oxygenated amorphous silicon“window layer”
                      (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was
                      investigated usinghard x-ray photoelectron spectroscopy and
                      compared to that of the boron-doped microcrystallinesilicon
                      (lc-Si:H(B))/ZnO:Al interface. The corresponding valence
                      band offsets have been determinedto be (2.8760.27) eV and
                      (3.3760.27) eV, respectively. A lower tunnel junction
                      barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to
                      that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked
                      to the higher device performances in cells where a
                      lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and
                      the ZnO:Al contact is employed.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-111 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000321761000095},
      doi          = {10.1063/1.4813448},
      url          = {https://juser.fz-juelich.de/record/135103},
}